Schedule

Technical Program

Ultra-wide bandgap materials have emerged as a potential route towards next generation power and RF devices with superior performance compared to conventional semiconductors such as Si, GaAs, SiC or GaN.  Many of the figure-of-merits for predictive device performance scale non-linearly with increasing critical electric field which is directly related to increasing bandgap and show great promise for these immature materials. Gallium oxide (Ga₂O₃) is an UWBG material of particular interest due to the availability of high-quality, relatively inexpensive, large-area native substrates with a wide range of doping required for various applications. However, there are still many technical challenges that must be addressed in order to realize the full potential of Ga₂O₃.  These include but are not limited to: epitaxial material quality and reductions of native defects; intentional doping; advanced device scaling and fabrication processes; and heterojunctions.

The 5th U.S. Gallium Oxide Workshop (GOX 2022) will be held in the Washington, D.C. area on August 7-10, 2022, to highlight domestic research in the rapidly emerging field of Ga₂O₃ and related materials with high critical field strength. The purpose of this workshop is to provide a premier platform for reporting recent advances in materials and device development and identify scientific gaps remaining. The intent is to create actionable coordination across government, industry and academia to enable rapid transitional technologies in this field.  There will be no written proceedings in order to facilitate a friendly and stimulating environment for scientific discussions among participants from domestic and international Ga₂O₃ research groups.  Attendees can expect topics including, but not limited to: bulk and epitaxial growth, theory/modeling/simulations, device and circuit advancements, materials characterization and novel properties, and heterostructures.

GOX 2022 will consist of two and a half days of presentations by invited and contributed speakers, as well as two evening poster sessions where the latest Ga₂O₃ results can be discussed. The Workshop will be preceded by a welcome reception beneficial for networking with others in the field and establishing new collaborations. Additionally, we hope that attendees will have time to explore all that the U.S. capitol area has to offer in terms of history and local attractions.

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Keynote Speaker

• Masataka Higashiwaki (NICT Japan, Japan), “Development of Vertical and Lateral Ga₂O₃ FETs for Power Switching and High-Frequency Applications”

Plenary Speakers

• Siddharth Rajan (The Ohio State University, USA), “Gallium Oxide Electronics – Device Engineering Toward Ultimate Material Limits”
• Huili Grace Xing (Cornell University, USA), “Fundamental Limits of Ga₂O₃ Power Devices and How to Get There”

Invited Speakers

• Jinwoo Hwang (The Ohio State University, USA), “Formation and Evolution of Point Defects and their Complexes in Gallium Oxide”
• Xiuling Li (University of Texas at Austin, USA), “High Aspect Ratio Ga₂O₃-based Homo and Heterostructures by Metal-assisted Chemical Etching”
• Adam Neal (Air Force Research Laboratory, USA), “Transport, Doping, and Defects in β-Ga₂O_3″
• Hartwin Peelaers (University of Kansas, USA), “First-Principles Modeling of Ga₂O₃“
• Steve Ringel (The Ohio State University, USA), “Characterization of Deep Level Defects in β-Ga₂O₃ Grown by Multiple Methods”
• Chase Scott (Northrop Grumman Synoptics, USA), “b-Ga₂O₃ Growth and Wafer Fabrication”
• Jim Speck (University of California, Santa Barbara, USA), “Progress in Gallium Oxide Materials”
• Kornelius Tetzner (Ferdinand-Braun-Institut, Germany), “Towards Lateral and Vertical Ga₂O₃ Transistors for High Voltage Power Switching”
• Hongping Zhao (The Ohio State University, USA), “MOCVD Growth of GaO and AlGaO”